ALATTIS Prototype Project

Coming Soon Announcement

Silicon carbide (SiC) power switches with blocking voltages up to 3.3 kV have been commercialized. However, presently, the United States lacks a domestic source or supplier of large area (≥64 mm2), high-voltage (≥10-kV) SiC insulated-gate bipolar transistors (IGBTs), and complementary PiN rectifier diodes. Although engineering samples of SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) exist for 6.5-kV and 10-kV blocking, there is still a need for qualified, commercial-off-the-shelf (COTS), high-current, high-voltage bipolar devices such as IGBTs and PiN diodes. This accelerated, large-area, high-voltage thick-epitaxial ALATTIS program seeks to establish a pathway for rapid prototyping and advanced-technology development of power switches enabling ≥10-kV blocking and ≥50-A on-state current of SiC IGBT switches and associated anti-parallel PiN diodes.
The ALATTIS Prototype Project seeks to enhance and improve the mission effectiveness of platforms, systems, and components in use by the Armed Forces by advancing and accelerating COTS high-current, high-voltage bipolar devices and establishing a pathway for rapid prototyping and advanced technology development of power switches enabling ≥10-kV blocking and ≥50-A on-state current of SiC IGBT switches and associated anti-parallel PiN diodes under the authority of 10 U.S.C. § 4022, which enables the Department of Defense (DoD) to conduct certain prototype projects.